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| savantic semiconductor product specification silicon npn power transistors 2SC2832 2SC2832a d escription with to-220 package low collector saturation voltage high v c bo high speed switching applications for high speed switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit 2SC2832 800 v cbo collector-base voltage 2SC2832a open emitter 900 v v ceo collector-emitter voltage open base 500 v v ebo emitter-base voltage open collector 8 v i c collector current 5 a i cm collector current-peak 10 a i b base current 3 a p c collector power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC2832 2SC2832a characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a; l=25mh 500 v v cesat collector-emitter saturation voltage i c =3a; i b =0.6a 1.0 v v besat base-emitter saturation voltage i c =3a; i b =0.6a 1.5 v 2SC2832 v cb =800v;i e =0 i cbo collector cut-off current 2SC2832a v cb =900v;i e =0 100 a i ebo emitter cut-off current v eb =5v; i c =0 100 a h fe-1 dc current gain i c =0.1a ; v ce =5v 15 h fe-2 dc current gain i c =3a ; v ce =5v 8 f t transition frequency i c =0.5a ; v ce =10v 3 mhz switching times 2SC2832 1.0 t on turn-on time 2SC2832a 1.2 s t stg storage time 3.0 s 2SC2832 1.0 t f fall time 2SC2832a i c =3a ; i b1 =-i b2 =-0.6a v cc =200v 1.2 s savantic semiconductor product specification 3 silicon npn power transistors 2SC2832 2SC2832a package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm) |
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